Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas. 2000.
Bipolar transistor biasing — Bipolar transistor amplifiers must be properly biased to operate correctly. In circuits made with individual devices (discrete circuits), biasing networks consisting of resistors are commonly employed. Much more elaborate biasing arrangements are … Wikipedia
Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP … Wikipedia
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
Semiconductor device modeling — creates models for the behavior of the electrical devices based on fundamental physics, such as the doping profiles of the devices. It may also include the creation of compact models (such as the well known SPICE transistor models), which try to… … Wikipedia
Power semiconductor device — Power semiconductor devices are semiconductor devices used as switches or rectifiers in power electronic circuits (switch mode power supplies for example). They are also called power devices or when used in integrated circuits, called power… … Wikipedia
Heterojunction bipolar transistor — The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it that can… … Wikipedia
Charakteristiken von Bipolarbausteinen — dvipolių įtaisų parametrai statusas T sritis radioelektronika atitikmenys: angl. bipolar device parameters vok. Charakteristiken von Bipolarbausteinen, f rus. параметры биполярных приборов, m pranc. performances des bipolaires, f … Radioelektronikos terminų žodynas
dvipolių įtaisų parametrai — statusas T sritis radioelektronika atitikmenys: angl. bipolar device parameters vok. Charakteristiken von Bipolarbausteinen, f rus. параметры биполярных приборов, m pranc. performances des bipolaires, f … Radioelektronikos terminų žodynas
performances des bipolaires — dvipolių įtaisų parametrai statusas T sritis radioelektronika atitikmenys: angl. bipolar device parameters vok. Charakteristiken von Bipolarbausteinen, f rus. параметры биполярных приборов, m pranc. performances des bipolaires, f … Radioelektronikos terminų žodynas
параметры биполярных приборов — dvipolių įtaisų parametrai statusas T sritis radioelektronika atitikmenys: angl. bipolar device parameters vok. Charakteristiken von Bipolarbausteinen, f rus. параметры биполярных приборов, m pranc. performances des bipolaires, f … Radioelektronikos terminų žodynas
